University of Illinois University of Illinois at Urbana - Champaign

Publications

February 2009
Edmund G. Seebauer

University of Illinois
Department of Chemical and Biomolecular Engineering
600 S. Mathews Avenue, Urbana, Illinois 61801-3792
Ph: 217-244-9214 Fax: 217-333-5052
e-mail: eseebaue@uiuc.edu
URL: www.scs.uiuc.edu/~eseebauer


Education
1983 B.S. Chemical Engineering, University of Illinois-Urbana
1986 Ph.D. Chemical Engineering, University of Minnesota
1987 Postdoctoral Associate, Sandia National Laboratories-Albuquerque

Professional Experience (all at the University of Illinois at Urbana-Champaign)
1988-94 Assistant Professor of Chemical Engineering
1994-97 Associate Professor of Chemical Engineering
1997- Professor of Chemical Engineering
2005-06 Interim Head of Chemical and Biomolecular Engineering
2006- James W. Westwater Professor of Chemical and Biomolecular Engineering
2006- Head of Chemical and Biomolecular Engineering

Awards
1988 NSF Presidential Young Investigator Award
1988 Dow Teaching Excellence Award
1989 DuPont Young Faculty Award
1989, 91 Observer for United States, IUPAC General Assembly
1994 Alfred P. Sloan Research Fellow (Chemistry)
1995 Inventor Recognition Award, Semiconductor Research Corporation
1996 Teaching Excellence Award, School of Chemical Sciences, UIUC
2000 Fellowship for Study in a Second Discipline (Philosophy), UIUC
2001 Fellow, American Vacuum Society
2004-06 IEEE Electron Device Society Distinguished Lecturer
2004 Beckman Associate, Center for Advanced Study, UIUC
2005 Excellence in Advising Award, College of Engineering, UIUC
2007 Fellow, American Association for the Advancement of Science
2008 Fellow, American Physical Society
2008 Triennial Paper Prize for Theory/Methodology, J. Process Control (with 7 co-authors)

Selected Current Professional Activities
1998- Manufacturing Science/Technology Group of AVS: Co-Chair, 2002-; Program Chair, 2002; Treasurer, 2000-; Program Committee, 1998-
2001-03 Program Chair for Electronic Materials Group, AIChE 2006−08 Co-organizer (with 2 others) and Proceedings Chair, 17th International Conference on Ion Implantation Technology
2008- International Governance Committee, International Conference on Ion Implantation Technology
2007-08 2nd Vice-Chair, Materials Engineering and Sciences Division, AIChE
2008-09 1st Vice-Chair, Materials Engineering and Sciences Division, AIChE (will succeed to Chair in 2009-10)
2009- Advisory Board Chair, Univ of Colorado Dept. of Chemical & Biological Engineering
2009- Advisory Board, Washington Univ (St. Louis) Dept. of Energy, Environmental & Chemical Engineering

Books
  1. Edmund G. Seebauer and Robert L. Barry. Fundamentals of Ethics for Scientists and Engineers. New York, Oxford University Press, 2001.
  2. Edmund G. Seebauer and Meredith C. Kratzer. Charged Defects in Semiconductors: Structure, Thermodynamics, and Diffusion. Engineering Materials and Processes Series. London, Springer-Verlag, 2009.

Book Chapters, Invited Reviews, and Trade Publications
  1. M. A. Mendicino, R. P. Southwell and E. G. Seebauer, "Chemical Vapor Deposition of TiSi2 Using SiH4 and TiCl4," Thin Solid Films, 253 (1994) 473-478.
  2. E. G. Seebauer and C. E. Allen, "Estimating Surface Diffusion Coefficients," Progr. Surf. Sci., 49 (1995) 265-330.
  3. R. P. Southwell, M. A. Mendicino and E. G. Seebauer, "Optimization of Selective TiSi2 CVD by Mechanistic Chemical Kinetics," J. Vac. Sci. Technol., A14 (1996) 928-934.
  4. I. I. Suni and E. G. Seebauer, "Surface Self-Diffusion at High Temperatures: New Simulational Insights," Thin Solid Films, 272 (1996) 229-234.
  5. E. G. Seebauer and R. Ditchfield, "Fixing Hidden Problems with Thermal Budget," Solid State Technol. 40 (1997) 111-120.
  6. E. G. Seebauer and C. E. Allen, "Surface Diffusion," in: Landolt-Börnstein Numerical Data and Functional Relationships: Diffusion in Semiconductors, Vol. III/33A, ed. D. L. Beke, (Springer Verlag, New York, 1998) Ch. 7.
  7. E. G. Seebauer and C. E. Allen, "Surface Diffusion," in: Landolt-Börnstein Numerical Data and Functional Relationships: Diffusion in Nonmetallic Solids, Vol. III/33B, ed. D. L. Beke, (Springer Verlag, New York, 1999) Ch. 12.
  8. E. G. Seebauer and M. Y. L. Jung, "Surface Diffusion of Adsorbates on Metals, Alloys, Oxides and Semiconductors," in: Landolt-Börnstein Numerical Data and Functional Relationships: Adsorbed Layers on Surfaces, Vol. III/42A, ed. H. P. Bonzel, (Springer Verlag, New York, 2001) Ch. 11.
  9. E. G. Seebauer, "Blowing the Whistle: How Does Intention Count?" Chemical Engineering, 108 (April, 2001) 123-126.
  10. E. G. Seebauer and H. Y. H. Chan, "Microelectronics Research in Chemical Engineering: A Metaphorical View," Reviews in Chemical Engineering, 18 (2002) 1-47.
  11. Edmund G. Seebauer, "Whistleblowing: Is It Always Obligatory?" Chemical Engineering Progress, 100 (2004) 23-27.
  12. Edmund G. Seebauer and Charlotte T. M. Kwok, "Microelectronics Fabrication," Encyclopedia of Chemical Engineering (Taylor and Francis, published online January 2006).
  13. R. D. Braatz, R. C. Alkire, E.G. Seebauer, E. Rusli, R. Gunawan, T, O. Drews, X. Li, and Y. He, "Perspectives on the Dynamics and Control of Multiscale System," J. Process Control, 16 (2006) 193-204.
  14. Edmund G. Seebauer and Meredith C. Kratzer, "Charged Point Defects in Semiconductors," Materials Science and Engineering Reviews, 55 (2006) 57-149.
  15. R. D. Braatz, R. C. Alkire, E. G. Seebauer, T. O. Drews, E. Rusli, M. Karulkar, F. Xue, Y. Qin, M. Y. L. Jung and R. Gunawan, "A Multiscale Systems Approach to Microelectronic Processes," Comp. and Chem. Eng., 30 (2006) 1643-1656.
  16. R. D. Braatz, R. C. Alkire and E. G. Seebauer, "Multiscale Modeling and Design of Electrochemical Systems," in Electrochemical Surface Modification - Thin Films, Functionalization and Characterization, Advances in Electrochemical Science and Engineering, ed. R. C. Alkire, D. M. Kolb, J. Lipkowski, and P. N. Ross (Wiley-VCH, Weinheim, Germany, 2008) 10, Ch. 4, pp. 289-334.
  17. Edmund G. Seebauer, Paul J. A. Kenis and Marina Miletic, “Chemical Engineering at Illinois,” Chemical Engineering Education, 43 (2009) 179-185.
  18. Edmund G. Seebauer and Prashun Gorai, “Formation of Ultra-Shallow Junctions,” Comprehensive Semiconductor Science & Technology: Materials, Preparation and Properties, ed. R. Fornari (Elsevier, in press).

Patents
  1. M. A. Mendicino and E. G. Seebauer, "Selective Low-Temperature Chemical Vapor Deposition of Titanium Disilicide onto Silicon Regions," U.S. Patent No. 5,633,036 granted 5/27/97.
  2. E. G. Seebauer, R. D. Braatz, M. Y. L. Jung and R. Gunawan, "Methods for Controlling Dopant Concentration and Activation in Semiconductor Structures," US patent pending, application filed 8/05.
  3. E. G. Seebauer, "Preparation of Ultra-shallow Semiconductor Junctions Using Intermediate Temperature-ramp Rates and Solid Interfaces for Defect Engineering," US provisional patent application filed 3/08.

Refereed Journal Publications
  1. Edward P. Duliba, Edmund G. Seebauer and R. L. Belford, "Nuclear Quadrupole Coupling in an EPR Investigation of a Low-Spin Cobalt (II) System," J. Magnetic Resonance, 49 (1982) 507-516.
  2. Edmund G. Seebauer, Edward P. Duliba, Duane A. Scogin, Robert B. Gennis and R. L Belford, "EPR Evidence on the Structure of the Copper (II)-Bacitracin A Complex," J. American Chemical Society, 105 (1983) 4926-4929.
  3. Edmund G. Seebauer, John M. Vohs and Richard I. Masel, "Effects of Artificial Protrusions on Self-Sustained Thermal Oscillations during Hydrogen Oxidation on Nickel," Ind. Eng. Chem. Fundam., 23 (1984) 19-24.
  4. E. G. Seebauer and L. D. Schmidt, "Surface Diffusion of Hydrogen on Pt(111): Laser-Induced Thermal Desorption Studies," Chem. Phys. Lett., 123 (1986) 129-133.
  5. E. G. Seebauer, A. C. F. Kong and L. D. Schmidt, "Adsorption and Desorption of NO, CO and H2 on Pt(111): Laser-Induced Thermal Desorption Studies," Surface Science, 176 (1986) 134-156.
  6. E. G. Seebauer, A. C. F. Kong and L. D. Schmidt, "Investigations of Adsorption on Pt and Rh by Laser-Induced Desorption," J. Vac. Sci. Technol., A5 (1987) 464-468.
  7. S. Y. Hwang, E. G. Seebauer and L. D. Schmidt, "Decomposition of CH3NH2 on Pt(111)," Surface Science, 188 (1987) 219-234.
  8. E. G. Seebauer, A. C. F. Kong and L. D. Schmidt, "Laser-Induced Desorption of Polyatomic Molecules with a CO2 Laser," Appl. Surface Science, 29 (1987) 380-390.
  9. E. G. Seebauer, A. C. F. Kong and L. D. Schmidt, "The Coverage Dependence of the Pre-exponential Factor for Desorption," Surface Science, 193 (1988) 417-436.
  10. E. G. Seebauer, A. C. F. Kong and L. D. Schmidt, "Surface Diffusion of CO and Hydrogen on Rh(111): Laser-Induced Thermal Desorption Studies," J. Chem. Phys., 88 (1988) 6597-6604.
  11. E. G. Seebauer, A. C. F. Kong and L. D. Schmidt, "Adsorption and Desorption of CO and H2 on Rh(111): Laser-Induced Desorption," Appl. Surface Science, 31 (1988) 163-172.
  12. E. G. Seebauer, "Oxidation and Annealing of GaAs(100) Studied by Photoreflectance," J. Appl. Phys., 66 (1989) 4963-4972.
  13. E. G. Seebauer, "Adsorption of CO, O2, and H2O on GaAs(100): Photoreflectance Studies," J. Vac. Sci. Technol., A7 (1989) 3279-3286.
  14. P. L. Jackson and E. G. Seebauer, "Accurate Methods for Simulating Electroreflectance and Photoreflectance Spectra of GaAs," J. Appl. Phys., 69 (1991) 943-948.
  15. K. A. Schultz and E. G. Seebauer, "Low Stress, Coolable Sample Mount for Ultrahigh Vacuum Studies of Fragile Semiconductors," Rev. Sci. Instrum., 63 (1992) 218-219.
  16. K. A. Schultz, I. I Suni, C. E. Allen and E. G. Seebauer, "Optical Second Harmonic Study of Sb Adsorption on Ge(111)," Surface Science, 276 (1992) 40-49.
  17. K. A. Schultz and E. G. Seebauer, "Surface Diffusion of Sb on Ge(111) Monitored Quantitatively with Optical Second Harmonic Microscopy," J. Chem. Phys., 97 (1992) 6958-6967.
  18. M. A. Mendicino and E. G. Seebauer, "Adsorption of TiCl4 on Si(100)," Surface Science, 277 (1992) 89-96.
  19. M. A. Mendicino and E. G. Seebauer, "Adsorption of Chlorine on Si(100)," Appl. Surface Science, 68 (1993) 285-290.
  20. M. A. Mendicino and E. G. Seebauer, "The Use of Teflon for Minimizing Spurious Reactions in Gas Dosing and Detection Systems," J. Vac. Sci. Technol., A10 (1992) 3590-3592.
  21. K. A. Schultz, I. I Suni and E. G. Seebauer, "Microscopy of Adsorbates by Surface Second Harmonic Generation," J. Opt. Soc. Am. B, 10 (1993) 546-550.
  22. M. A. Mendicino and E. G. Seebauer, "Adsorption of TiCl4, SiH4 and HCl on Si(100): Application to TiSi2 CVD and Si Etching," J. Electrochem. Soc., 140 (1993) 1786-1793.
  23. M. A. Mendicino and E. G. Seebauer, "Detailed In-Situ Monitoring of Film Growth: Application to TiSi2 CVD", J. Crystal Growth, 134 (1993) 377-385.
  24. C. R. Carlson, W. F. Buechter, F. Che-Ibrahim and E. G. Seebauer, "Adsorption/Desorption Kinetics of H2O on GaAs(100) Measured by Photoreflectance," J. Chem. Phys., 99 (1993) 7190-7197.
  25. I. I. Suni and E. G. Seebauer, "A New Physical Picture for Surface Diffusion at High Temperatures," Surface Science, 301 (1994) L235-238.
  26. I. I. Suni and E. G. Seebauer, "Surface Diffusion of In on Ge(111) Studied by Optical Second Harmonic Microscopy," J. Chem. Phys., 100 (1994) 6772-6777.
  27. E. G. Seebauer, "Quantitative Extraction of Continuous Distributions of Energy States and Pre-exponential Factors from Thermal Desorption Spectra," Surface Science, 316 (1994) 391-405.
  28. M. A. Mendicino and E. G. Seebauer, "Kinetics of Salicide Contact Formation for Thin-Film SOI Transistors," J. Electrochem. Soc., 142 (1995) L28-L29.
  29. R. P. Southwell and E. G. Seebauer, "Differential-Conversion Temperature Programmed Desorption: A New Method for Obtaining Bimolecular Surface Rate Constants," Surface Science, 340 (1995) 281-292.
  30. C. E. Allen and E. G. Seebauer, "Surface Diffusion of Sb on Si(111) Measured by Second Harmonic Microscopy," Langmuir, 11 (1995) 186-190.
  31. R. P. Southwell and E. G. Seebauer, "SiH4 on TiSi2: An Investigation of Gas Adsorption on Metal-like Compounds," Surface Science, 329 (1995) 107-114.
  32. R. P. Southwell and E. G. Seebauer, "Adsorption of TiCl4 on TiSi2: Application to Silicide Chemical Vapor Deposition," J. Vac. Sci. Technol., A13 (1995) 221-229.
  33. R. Ditchfield, M. A. Mendicino and E. G. Seebauer, "Adsorption of Chlorine on TiSi2: Application to Etching and Deposition of Silicide Films," J. Electrochem. Soc., 143 (1996) 266-271.
  34. C. E. Allen and E. G. Seebauer, "Surface Diffusivities and Reaction Rate Constants: Making a Quantitative Experimental Connection," J. Chem. Phys., 104 (1996) 2557-2565.
  35. C. E. Allen, R. Ditchfield and E. G. Seebauer, "Surface Diffusion of In on Si(111): Evidence for Surface Ionization Effects," J. Vac. Sci. Technol., A14 (1996) 22-29.
  36. R. P. Southwell and E. G. Seebauer, "A Predictive Kinetic Model for the Chemical Vapor Deposition of TiSi2," J. Electrochem. Soc., 143 (1996) 1726-1736.
  37. D. A. Hansen, M. R. Halbach and E. G. Seebauer, "Experimental Measurements of Fast Adsorption Kinetics of H2 on Vicinal Si(100) and (111) Surfaces," J. Chem. Phys., 104 (1996) 7338-7343.
  38. H. Idriss and E. G. Seebauer, "Fast Photoreactions of Oxygenates on Tropospheric Fly Ash Particles," J. Vac. Sci. Technol., A14 (1996) 1627-1632.
  39. H. Idriss and E. G. Seebauer, "Photoreactions of Ethanol and MTBE on Metal Oxide Particles in the Troposphere," Catalysis Today, 33 (1997) 215-225.
  40. R. Ditchfield and E. G. Seebauer, "Rapid Thermal Processing: Fixing Problems with the Concept of Thermal Budget," J. Electrochem. Soc., 144 (1997) 1842-1849.
  41. C. E. Allen, R. Ditchfield and E. G. Seebauer, "Surface Diffusion of Ge on Si(111): Experiment and Simulation," Phys. Rev. B, 55, (1997) 13,304-13,313.
  42. R. P. Southwell and E. G. Seebauer, "Kinetics of TiSi2 Formation and Silicon Consumption during Chemical Vapor Deposition," J. Electrochem. Soc., 144 (1997) 2122-2136.
  43. R. P. Southwell and E. G. Seebauer, "Practical Processing Issues in Titanium Silicide CVD," Appl. Surf. Sci., 119 (1997) 41-49.
  44. R. Ditchfield, D. Llera-Rodríguez, and E. G. Seebauer, "Nonthermal Effects of Photon Illumination on Surface Diffusion," Phys. Rev. Lett., 81 (1998) 1259-1262.
  45. H. Idriss and E. G. Seebauer, "Photooxidation of Ethanol on Fe-Ti Oxide Particulates," Langmuir, 14 (1998) 6146-6150.
  46. E. R. Blomiley and E. G. Seebauer, "Temperature Programmed Desorption of NO Photoadsorbed on Cl-treated Fe2O3," Langmuir, 15 (1999) 5970-5976.
  47. E. R. Blomiley and E. G. Seebauer, "Manipulating Photoadsorption Kinetics: NO on Cl-treated Fe2O3," J. Phys. Chem. B, 103 (1999) 5035-5041.
  48. R. Ditchfield and E. G. Seebauer, "Direct Measurement of Ion-Influenced Surface Diffusion," Phys. Rev. Lett., 82 (1999) 1185-1188.
  49. Hua. Fang, Mehmet C. Ozturk, E. G. Seebauer and D. E. Batchelor, "Effects of Arsenic Doping on Chemical Vapor Deposition of Titanium Silicide," J. Electrochem. Soc., 146 (1999) 4240-4245.
  50. H. Idriss and E. G. Seebauer, "Reactions of Ethanol on Metal Oxides," J. Molec. Catal. A, 152 (2000) 201-212.
  51. H. Idriss and E. G. Seebauer, "Effect of Oxygen Electronic Polarizability on Catalytic Reactions over Oxides," Catal. Lett., 66 (2000) 139-145.
  52. R. Ditchfield, D. Llera-Rodríguez, and E. G. Seebauer, "Semiconductor Surface Diffusion: Nonthermal Effects of Photon Illumination," Phys. Rev. B, 61 (2000) 13,710-13,720.
  53. R. Ditchfield and E. G. Seebauer, "Semiconductor Surface Diffusion: Effects of Low-Energy Ion Bombardment," Phys. Rev. B, 63 (2001) 1153-1162.
  54. Z. Wang and E. G. Seebauer, "Estimating Pre-exponential Factors for Desorption from Semiconductors: Consequences for a Priori Process Modeling," Appl. Surface Sci., 181 (2001) 111-120.
  55. Hua Fang, Mehmet C. Ozturk, E. G. Seebauer and D. E. Batchelor, "Arsenic Redistribution during Rapid Thermal Chemical Vapor Deposition of TiSi2 on Si," J. Electrochem. Soc., 148 (2001) G43-G49.
  56. A. S. Dalton, D. Llera-Hurlburt, and E. G. Seebauer, "Surface Diffusion Kinetics on Amorphous Silicon," Surface Sci.,494 (2001) L761-L766.
  57. D. Llera-Hurlburt, A. S. Dalton and E. G. Seebauer, "Temperature-Dependent Surface Diffusion Parameters on Amorphous Materials," Surface Sci., 504 (2002) 244-252.
  58. Z. Wang and E. G. Seebauer, "Extraordinary Temperature Amplification in Ion-Stimulated Surface Processes at Low Energies," Phys. Rev. B., 66 (2002) 205,409(1-4).
  59. Ho Yeung H. Chan, Kapil Dev and E. G. Seebauer, "Vacancy Charging on Si(100)-(2'1): Consequences for Surface Diffusion and STM Imaging," Phys. Rev. B, 67 (2003) 035311(1-7).
  60. Kapil Dev and E. G. Seebauer, "Surface Vacancy Charging on Semiconductors at Nonzero Temperatures," Phys. Rev. B, 67 (2003) 035312(1-4).
  61. Kapil Dev and E. G. Seebauer, "Vacancy Charging on Si(111)-(7'7) Investigated by Density Functional Theory, Surface Sci., 538 (2003) L495-L499.
  62. R. Gunawan, M. Y. L. Jung, E. G. Seebauer and R. D. Braatz, "Maximum A Posteriori Estimation of Transient Enhanced Diffusion Energetics," AIChE J., 49 (2003) 2114-2123.
  63. M. Y. L. Jung, R. Gunawan, R. D. Braatz and E. G. Seebauer, "Parameter Sensitivity Analysis of Boron Activation and Transient Enhanced Diffusion in Silicon," J. Electrochem. Soc., 150 (2003) G758-G765.
  64. M. Y. L. Jung, R. Gunawan, R. D. Braatz and E. G. Seebauer, "A Simplified Picture for Transient Enhanced Diffusion of Boron in Silicon," J. Electrochem. Soc., 151 (2004) G1-G7.
  65. M. Y. L. Jung, R. Gunawan, R. D. Braatz and E. G. Seebauer, "Ramp-Rate Effects on Transient Enhanced Diffusion and Dopant Activation: a Simple Explanation," J. Electrochem. Soc., 150 (2003) G838-G842.
  66. Kapil Dev, M. Y. L. Jung, R. Gunawan, R. D. Braatz and E. G. Seebauer, "Mechanism for Coupling between Properties of Interfaces and Bulk Semiconductors," Phys. Rev. B, 68 (2003) 195311.
  67. R. Gunawan, M. Y. L. Jung, E. G. Seebauer, and R. D. Braatz, "Optimal Control of Rapid Thermal Annealing in a Semiconductor Process," J. Process Control, 14 (2004) 270-278.
  68. A. S. Dalton and E. G. Seebauer, "Structure and Mobility on Amorphous Silicon Surfaces," Surface Sci., 550 (2004) 140-148.
  69. S. H. Tey, K. Prasad, K. C. Tee, L. H. Chan, and E. G. Seebauer, "Nonlinear Optical Studies of Cu Diffusion at Surfaces and Interfaces of Microelectronic Interconnect Structures," Thin Solid Films, 466 (2004) 217-224.
  70. J. C. Ganley, E. G. Seebauer and R. I. Masel, "Porous Anodic Alumina Posts as a Catalyst Support in Microreactors for Production of Hydrogen from Ammonia," AIChE J., 50 (2004) 829-834.
  71. M. Y. L. Jung, R. Gunawan, R. D. Braatz and E. G. Seebauer, "Effect of Near-Surface Band Bending on Dopant Profiles in Ion-Implanted Silicon," J. Appl. Phys., 95 (2004) 1134-1140.
  72. Kapil Dev and E. G. Seebauer, "Band Bending at the Si(111)-SiO2 Interface Induced by Low-Energy Ion Bombardment," Surface Sci., 550 (2004) 185-191.
  73. M. Y. L. Jung, R. Gunawan, R. D. Braatz and E. G. Seebauer, "Pair Diffusion and Kick-out: Quantifying Relative Contributions to Diffusion of Boron in Silicon," AIChE J., 50 (2004) 3248-3256.
  74. Jason C. Ganley, Kate L. Riechmann, Edmund G. Seebauer and Richard I. Masel, "Porous Anodic Alumina as a Catalyst Support for Microreactors," J. Catalysis, 227 (2004) 26-32.
  75. J. C. Ganley, E. G. Seebauer and R. I. Masel, "Development of a Microreactor for the Production of Hydrogen from Ammonia," J. Power Sources, 137 (2004) 53-61.
  76. Kapil Dev and E. G. Seebauer, "Vacancy Charging on Si(111)-"1'1" Investigated by Density Functional Theory," Surface Science, 572 (2004) 483-489.
  77. M. Y. L. Jung, Charlotte T. M. Kwok, Richard D. Braatz, and E. G. Seebauer, "Interstitial Charge States in Boron-Implanted Silicon," J. Appl. Phys., 97 (2005) 063520(1-5).
  78. Kapil Dev and E. G. Seebauer, "Band Bending at the Si(100)-Si3N4 Interface Studied by Photoreflectance Spectroscopy," Surface Science, 583 (2005) 80-87.
  79. Z. Wang and E. G. Seebauer, "Temperature-Dependent Energy Thresholds for Ion-Stimulated Defect Formation in Solids," Phys. Rev. Lett., 95 (2005) 015501(1-4).
  80. Charlotte T. M. Kwok, Kapil Dev, Richard D. Braatz, and E. G. Seebauer, "A Method for Quantifying Annihilation Rates of Bulk Point Defects at Surfaces," J. Appl. Phys., 98 (2005) 013524.
  81. Zheng Ni, E. G. Seebauer, Richard I. Masel, "Effects of Microreactor Geometry On Conversion:Differences Between Posted Reactors and Channel Reactors," Ind. Eng. Chem. Research, 44 (2005) 4267-4271.
  82. Ramakrishnan Vaidyanathan, Michael Y. L. Jung, Richard D. Braatz and E. G. Seebauer "Measurement of Defect-Mediated Diffusion: The Case of Silicon Self-Diffusion," AIChE J., 52 (2006) 366-370.
  83. Vaidyanathan Subramanian, Zheng Ni, E. G. Seebauer and Richard I. Masel, "High Temperature Titania-Alumina Supports," Ind. Eng. Chem. Res., 45 (2006) 3815-3820.
  84. Edmund G. Seebauer, Kapil Dev, Michael Y. L. Jung, Ramakrishnan Vaidyanathan, Charlotte T. M. Kwok, Joel W. Ager, Eugene E. Haller, and Richard D. Braatz, "Controlling Defect Concentrations in Bulk Semiconductors through Surface Adsorption," Phys. Rev. Lett., 97 (2006) 055053(1-4).
  85. Ramakrishnan Vaidyanathan, Houda Graoui, Majeed Foad and Edmund G. Seebauer, "Influence of Surface Adsorption in Improving Ultrashallow Junction Formation," Appl. Phys. Lett. 89 (2006) 152114.
  86. Xiao Zhang, Min Yu, Charlotte T. M. Kwok, Ramakrishnan Vaidyanathan, Richard D. Braatz, and Edmund G. Seebauer, "Precursor Mechanism for Interaction of Bulk Interstitial Atoms with Si(100)," Phys. Rev. B., 74 (2006) 235301.
  87. A. S. Dalton and E. G. Seebauer, "An Improved Theory for Temperature-Dependent Arrhenius Parameters in Mesoscale Surface Diffusion," Surface Sci., 601 (2007) 728-734.
  88. Z. Wang and E. G. Seebauer, "Temperature-Dependent Energy Thresholds for Ion-Stimulated Defect Formation in Solids: Effects of Ion Mass and Substrate," Surface Sci., 601 (2007) 2453-2458.
  89. Vaidyanathan Subramanian, Jieun Choi, E. G. Seebauer, and R. I. Masel, "TiO2-Al2O3 as a Support for Partial Oxidation of Propane," Catal. Lett., 113 (2007) 13-18.
  90. S. H. Yeong, M. P. Srinivasan, B. Colombeau and Lap Chan, Ramam Akkipeddi, Charlotte T. M. Kwok, Ramakrishnan Vaidyanathan, and Edmund G. Seebauer, "Defect Engineering by Surface Chemical State in Boron-Doped Pre-amorphized Silcon," J. Appl. Phys., 91 (2007) 102112.
  91. Ramakrishnan Vaidyanathan, Michael Y. L. Jung and Edmund G. Seebauer, "Mechanism and Energetics of Self-Interstitial Formation and Diffusion in Silicon," Phys. Rev. B, 75 (2007) 195209.
  92. K. E. Thurman, Y. V. Kondratenko, E. G. Seebauer, "Synthesis and Characterization of Amorphous TiO2 Films," Illinois Journal of Undergraduate Research, 3 (2008) 11-18.
  93. Vaidyanathan Subramanian, Nicolas Ndiege, Edmund G. Seebauer, Mark A. Shannon, Richard I. Masel, "Synthesis of Tantalum Pentoxide Films for High-Temperature Photonic Bandgap Applications," Thin Solid Films, 516 (2008) 4784-4792.
  94. Charlotte. T. M. Kwok, K. Dev, R. D. Braatz and E. G. Seebauer, "Parameter Sensitivity Analysis and Maximum A Posteriori Estimation of Energetics in Silicon Self-diffusion," Automatica, 44 (2008) 2241-2247.
  95. Charlotte T. M. Kwok, Richard D. Braatz, Silke Paul, Wilfried Lerch and Edmund G. Seebauer, “Mechanistic Benefits of Millisecond Annealing for Diffusion and Activation of Boron in Silicon,” J. Appl. Phys. 105 (2009) 063514.
  96. Charlotte T. M. Kwok, Richard D. Braatz, Silke Paul, Wilfried Lerch and Edmund G. Seebauer, “An Improved Model for Boron Diffusion and Activation in Silicon,” AIChE J. in press.

Conference Proceedings
  1. E. G. Seebauer, J. J. Foster, W. F. Banholzer and R. I. Masel, "Ignition Instabilities in Catalytic Combustion," Proceedings of the Fifth Workshop on Catalytic Combustion (EPA) (1982) 134-152.
  2. E. G. Seebauer and L. D. Schmidt, "Laser-Induced Desorption Determinations of Surface Diffusion on Rh(111)," Diffusion at Interfaces: Microscopic Concepts, M. Grunze, H. J. Kreuzer, and J. J. Weimer, eds. (Springer-Verlag, Berlin, 1988) p. 37-42.
  3. E. G. Seebauer and L. D. Schmidt, "Experimental Measurements of Hydrogen and CO Surface Diffusion on Rhodium," Diffusion and Convection in Porous Catalysts (AIChE Symposium Series, Vol. 84, No. 266, 1988) 1-9.
  4. Michael A. Mendicino and Edmund G. Seebauer, "A Predictive Chemical Model for TiSi2 CVD," Proceedings of Techcon 1993 (Semiconductor Research Corporation), 103-105.
  5. M. A. Mendicino, R. P. Southwell and E. G. Seebauer, "Predictive Surface Kinetic Analysis: The Case of TiSi2 CVD," Gas-Phase and Surface Chemistry in Electronic Materials Processing, (MRS Vol. 334, 1994), p. 63-68.
  6. I. I. Suni and E. G. Seebauer, "A New Physical Picture for Surface Diffusion at High Temperatures," Mechanisms of Thin Film Evolution (MRS Vol. 317, 1994), p. 21-26.
  7. R. Ditchfield and E. G. Seebauer, "General Kinetic Rules for Rapid Thermal Processing," Rapid Thermal and Integrated Processing V (MRS Vol. 429, 1996), 133-138.
  8. R. Ditchfield and E. G. Seebauer, "Problems with the Concept of Thermal Budget: Experimental Demonstrations, Rapid Thermal and Integrated Processing VI (MRS Vol. 470, 1997), 313-318.
  9. Hua Fang, Mehmet C. Ozturk and E. G. Seebauer, "Selective Rapid Thermal Chemical Vapor Deposition of Titanium Silicide on Arsenic Implanted Silicon," Rapid Thermal and Integrated Processing VIII (MRS Vol. 514, 1998) 231-236.
  10. R. Ditchfield and E. G. Seebauer, "Beyond Thermal Budget: Using D·t in Kinetic Optimization of RTP," Rapid Thermal and Integrated Processing VII (MRS Vol. 525, 1998), 57-62.
  11. E. G. Seebauer, "Spike Anneals in RTP: Kinetic Analysis," Advances in Rapid Thermal Processing (ECS Vol. 99-10, 1999) 67-71.
  12. M. Y. L. Jung, R. Gunawan, R. D. Braatz and E. G. Seebauer, "New Physics for Modeling Transient Enhanced Diffusion in RTP," Rapid Thermal and Other Short-Time Processing Technologies II (ECS Vol. 2000-9, 2000) 15-20.
  13. K. Dev and E. G. Seebauer, "Measurement of Fermi Pinning at Si-SiO2 Interfaces: Implications for TED Spike Anneals," Rapid Thermal and Other Short-Time Processing Technologies III (ECS Vol. PV-2002-11, 2002) 357-362.
  14. M. Y. L. Jung and E. G. Seebauer, "Measurement of Nonthermal Illumination-Enhanced Diffusion in Silicon," Rapid Thermal and Other Short-Time Processing Technologies III (ECS Vol. 2002-11, 2002) 363-368.
  15. M. A. Shannon, G. V. Moore, J. C. Ganley, C. M. Miesse, C. A. Rice, E. G. Seebauer, and R. I. Masel, "High-temperature Microcombustion-based Ammonia Microchemical Hydrogen Generator Reactors for PEM Fuel Cells," Proceedings of Workshop on Solid State Sensors, Actuators, and Microsystems (2002) 27-30.
  16. J. C. Ganley, E. G. Seebauer, and R. I. Masel, "Microreactors for Fuel Conversion," Proceedings of the 40th Power Sources Conference (2002) 367-370.
  17. M. Y. L. Jung and E. G. Seebauer, "Measurement of Nonthermal Illumination-Enhanced Diffusion in Silicon," Proceedings of the 10th IEEE International Conference on Advanced Thermal Processing of Semiconductors (IEEE, 2002) 133-136.
  18. R. Gunawan, M. Y. L. Jung, R. D. Braatz and E. G. Seebauer, "Systems Analysis Applied to Modeling Dopant Activation and TED in Rapid Thermal Annealing," Proceedings of the 10th IEEE International Conference on Advanced Thermal Processing of Semiconductors (IEEE, 2002) 107-110.
  19. S. H. Tey, K. Prasad, E. G. Seebauer, and L. Chan, "Measurement of Copper Interface Diffusion by Second Harmonic Generation," Proceedings of the 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, (IEEE, 2003) 523-526.
  20. R. D. Braatz, R. C. Alkire, E. G. Seebauer, T. O. Drews, R. Gunawan and M. Y. L. Jung, "Systems Engineering of Materials Manufacturing Processes at the Nanoscale," Proc. 3rd Chemical Engineering Conference for Collaborative Research in the Eastern Mediterranean, (2003) W-4.3.
  21. K.Dev, R. Gunawan, M. Y. L. Jung, R. D. Braatz and E. G. Seebauer, "Measurement of Fermi Pinning at Si-SiO2 Interfaces: Implications for TED Spike Anneals," Proc. 7th International Workshop on the Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semiconductors (2003) 383-9.
  22. R. Gunawan, M. Y. L. Jung, R. D. Braatz and E. G. Seebauer, "Systems Analysis Applied to Modeling TED and Dopant Activation in Rapid Thermal Annealing," Proc. 7th International Workshop on the Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semiconductors (2003) 393-8.
  23. R. Gunawan, M. Y. L. Jung, E. G. Seebauer, and R. D. Braatz, Optimal control of transient enhanced diffusion. Proc. IFAC Symp. on Advanced Control of Chemical Processes, Hong Kong, (2004) 603-608.
  24. R. D. Braatz, R. C. Alkire, E. G. Seebauer, E. Rusli, R. Gunawan, T. O. Drews, X. Li, and Y. He, "Perspectives on the Dynamics and Control of Multiscale Systems," Proc. International Symp. on Dynamics and Control of Process Systems (2004) paper 96.
  25. E. G. Seebauer, "Surface Control of Interstitial Behavior for Improved Ultrashallow Junction Formation," Proc. Fourth International Workshop on Junction Technology, (Fudan Univ Press, Shanghai, 2004) 81-86.
  26. M. Y. L. Jung and E. G. Seebauer, "Measurement of Nonthermal Illumination-Enhanced Self-Diffusion in Silicon," Proc. Fourth International Workshop on Junction Technology, (Fudan Univ Press, Shanghai, 2004) 87-89.
  27. Jason C. Ganley, Richard Z. Ni. Edmund G. Seebauer, Richard I. Masel, "Porous Alumina Microreactors For The Production Of Hydrogen From Ammonia," Proceedings of the 42nd Power Sources Conference (2004) 257-260.
  28. K. Dev and E. G. Seebauer, "Influence of Surface Chemistry on Ultrashallow Junction Formation," Advanced Short-Time Processing for Si-based CMOS Devices II, (ECS Vol. PV-2004-1, 2004) 66-70.
  29. E. G. Seebauer, "New Mechanisms Governing Diffusion on Silicon for Transistor Manufacture," Proc. Fourth International Conference on Solid-State Technology and Integrated Circuits, (IEEE, Beijing, 2004) 1032-1037.
  30. E. G. Seebauer, "Using Surface Chemistry for Defect Engineering in Ultrashallow Junction Formation," Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes and Equipment (ECS Vol. PV-2005-1, 2005) 33-42.
  31. Charlotte T. Kwok, Kapil Dev, Edmund G. Seebauer, and Richard D. Braatz, "Maximum A Posteriori Estimation of Energetics in Silicon Self-diffusion," Proc. 44th IEEE Conf. Decision and Control (IEEE, Piscataway, NJ, 2005) 2058-2063.
  32. E. G. Seebauer, "Defect Engineering in Nanoscale Semiconductors through Surface Chemistry," Proc. NanoSingapore 2006 (IEEE, Piscataway, NJ, 2006).
  33. E. G. Seebauer, "Controlling Dopant Diffusion and Activation through Surface Chemistry," Proc. 16th Int'l Conf. Ion Implantation Technology (Springer, NY, 2006).
  34. E. G. Seebauer, "Defect Engineering in Semiconductors through Adsorption and Photoexcitation," Proc. Eighth International Conference on Solid-State and Integrated Circuit Technology, (IEEE, Piscataway, NJ, 2006) 450-453.
  35. Edmund G. Seebauer, S. H. Yeong, M. P. Srinivasan, C. T. M. Kwok, R. Vaidyanathan, Benjamin Colombeau and Lap Chan, "Defect Engineering for Ultrashallow Junctions using Surfaces," Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 3: New Materials, Processes and Equipment - ECS Trans. 6 (2007) 365-372.
  36. Edmund G. Seebauer, S. H. Yeong, M. P. Srinivasan, C. T. M. Kwok, R. Vaidyanathan, Benjamin Colombeau and Lap Chan, "Defect Engineering for Ultrashallow Junctions using Surfaces," Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 3: New Materials, Processes and Equipment - ECS Trans. 13 (2008) 55-62.
  37. E. G. Seebauer, C. T. M. Kwok, R. Vaidyanathan, Y. V. Kondratenko, S. H. Yeong, M. P. Srinivasan, Benjamin Colombeau and Lap Chan, "Defect Engineering for Ultrashallow Junctions using Surfaces," Proc. 17th Int'l Conference on Ion Implantation Technology (AIP, NY, 2008) 34-38.
  38. Y. Kondratenko, C. T. M. Kwok, R. Vaidyanathan and E. G. Seebauer, "Optically Stimulated Diffusion in Ultrashallow Junction Formation," Proc. 17th Int'l Conference on Ion Implantation Technology (AIP, NY, 2008) 228-232.
  39. Edmund G. Seebauer, "Surfaces and Interfaces for Controlled Defect Engineering," Proc. Ninth Int'l Conference on Solid-State and Integrated Circuit Technology (IEEE, Piscataway, NJ, 2008) C5.5(1-4).
  40. C. T. M. Kwok, Y. Kondratenko and E. G. Seebauer, “Improved Mechanistic Understanding of Millisecond Annealing Techniques for Ultrashallow Junction Formation,” Proc. Int’l Workshop on Insight in Semiconductor Device Fabrication, Metrology and Modeling 2009.

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